Amato G, Boarino L, Bellotti F: On the apparently anomalous response of porous silicon to nitrogen dioxide. Appl Phys Lett 2004, 85:4409. 10.1063/1.1819517CrossRef Repotrectinib 2. Rucavado E, Badilla JP, Ramírez-Porras A: The Effect of N2 in Vapor Detectors Based on Porous Silicon Layers. ECS Trans 2008, 16:299–303.CrossRef 3. Peng KQ, Wang X, Lee S-T: Gas sensing properties of single crystalline porous silicon nanowires. Appl Phys Lett 2009, 95:243112. 10.1063/1.3275794CrossRef 4. Fagila G, SB525334 chemical structure Baratto C, Sberveglieri G, Gaburro Z, Pavesi L: Surface photovoltage studies of porous silicon in presence of polluting gases: toward a selective

gas sensor. Proc SPIE 2003, 5222. doi:10.1117/12.509074 5. Skryshevsky VA, Zinchuk VM, Benilov AI, Milovanov YS, Tretyak OV: Overcharging of porous silicon localized states at gas adsorption. Semicond Sci Technol 2006, 21:1605–1608. 10.1088/0268-1242/21/12/018CrossRef

6. Granitzer P, Rumpf K, Krenn H: Ferromagnetic nanostructures incorporated in quasi-onedimensional porous silicon channels suitable for magnetic sensor applications. J Nanomater 2006, 2006:1–7.CrossRef 7. Granitzer P, Rumpf K, Roca AG, Morales MP, Poelt P, Albu M: Investigation of a Mesoporous Silicon www.selleckchem.com/products/Cyclosporin-A(Cyclosporine-A).html Based Ferromagnetic Nanocomposite. Nanoscale Res Lett 2010, 5:374–378. 10.1007/s11671-009-9491-7CrossRef 8. Kronik L, Shapira Y: Surface photovoltage phenomena: theory, experiments, and applications. Surf Sci Rep 1999, 37:1–206. 10.1016/S0167-5729(99)00002-3CrossRef 9. Burnstein L, Shapira Y, Partee J, Shinar J, Lubianiker Y, Balberg I: Surface photovoltage

spectroscopy of porous silicon. Phys Rev B 1997, 55:R1930. 10.1103/PhysRevB.55.R1930CrossRef Rolziracetam 10. Suntao W, Yanhua W, Qihua S: Measurement and analysis of the characteristic parameters for the porous silicon/silicon using photovoltage spectra. Appl Surf Sci 2000, 158:268–274. 10.1016/S0169-4332(00)00008-8CrossRef 11. Wang B, Wang D, Zhang L, Li T, Phys J: A comparative study of transition states of porous silicon by surface photovoltage spectroscopy and time-resolved photoluminescence spectroscopy. J Phys Chem Solids 1997, 1:25–31. 12. Wang B, Wang D, Zhang L, Li T: Surface photovoltaic characterizations of porous silicon layers. Thin Solids Films 1997, 293:40–44. 10.1016/S0040-6090(96)08857-8CrossRef 13. Duzhko V, Koch F, Dittrich T: Transient photovoltage and dielectric relaxation time in porous silicon. J Appl Phys 2002, 91:9432. 10.1063/1.1471383CrossRef 14. Dittrich T, Duzhko V: Photovoltage in free-standing mesoporous silicon layers. Phys Status Solidi A 2003, 197:107. 10.1002/pssa.200306477CrossRef 15. Granitzer P, Rumpf K: Porous silicon – a versatile host material. Materials 2010, 3:943. 10.3390/ma3020943CrossRef 16. Reschikov MA, Foussekis M, Baski AA: Surface photovoltage in undoped n -type GaN. J Appl Phys 2010, 107:113535. 10.1063/1.3430979CrossRef 17. Foussekis M, Baski AA, Reshchikov MA: Photoadsorption and photodesorption for GaN. Appl Phys Lett 2009, 94:162116. 10.1063/1.