Characteristic FET devices based on InSb nanowires have n-type co

Characteristic FET devices based on InSb nanowires have n-type conductivity because of the Sb vacancies. Meanwhile, InSb nanowires have an electron concentration of 3.6× 1017 cm−3 and an electron mobility of 215.25 cm2 V−1 s−1. Individual InSb nanowire was fabricated for M-IR photodetectors based on the M-S-M structure. A power-law dependence of the photocurrent on the light intensity was observed, which suggests the existence of defect states that are consistent with an n-type conductivity mechanism in the InSb nanowires. Moreover,

the photodetectors exhibit good photoconductive performance, good stability and reproducibility, superior responsivity (8.4 × 104 A W−1), and quantum LY2874455 efficiency (1.96 × 106%). These unique properties are attributed to the high surface-to-volume ratio and superior crystallinity of InSb nanowires. In addition, the M-S-M structure

can further enhance N e (or RAD001 ΔI) and the electron transport speed, significantly increasing the sensitivity of the photodetectors. The superior photoelectric properties of InSb nanowires are highly promising for application in high-sensitivity and high-speed nanoscale optical communication devices and photodetectors. Authors’ information CHK and WCC are PhD students at National Tsing Hua University. SJL holds a professor position at National Tsing Hua University. JMW holds an associate professor position at National Tsing Hua University. Acknowledgments The authors thank Mr. Guo-Kai Hsu for the helpful SEM analyses, Mr. Hsin-I Lin for the helpful FIB experiment, and the financial

supports from the National Science Council, Taiwan, under grant numbers NSC-99-2221-E-007-069-MY3 and NSC-100-2628-E-035-006-MY2. References 1. Chen CY, Huang JH, Lai KY, Jen YJ, Liu CP, He JH: Giant optical anisotropy of oblique-aligned ZnO nanowire arrays. Opt Express 2012, 20:2015–2024.CrossRef 2. Chen MW, Chen CY, Lien DH, Ding Y, He JH: Photoconductive enhancement of single ZnO nanowire through localized Schottky effects. Opt Express 2010, 18:14836–14841.CrossRef 3. Chen CY, Chen MW, Ke JJ, Lin CA, Retamal JRD, He JH: Surface effects on optical and electrical properties of ZnO nanostructures. Pure Appl Chem 2010, 82:2055–2073.CrossRef 4. Chen Astemizole CY, Retamal JRD, Wu IW, Lien DH, Chen MW, Ding Y, Chueh YL, Wu CI, He JH: Probing surface band bending of surface-engineered metal oxide nanowires. ACS Nano 2012, 6:9366–9372.CrossRef 5. Li L, Auer E, Liao M, Fang X, Zhai T, Gautam UK, Lugstein A, Koide Y, Bandoa Y, Golberg D: Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide find more nanobelts. Nanoscale 2011, 3:1120–1126.CrossRef 6. Wu JM: A room temperature ethanol sensor made from p-type Sb-doped SnO 2 nanowires. Nanotechnology 2010, 21:235501.CrossRef 7. Liu M, Wang H, Yan C, Will G, Bell J: One-step synthesis of titanium oxide with trilayer structure for dye-sensitized solar cells. Appl Phys Lett 2011, 98:133113.CrossRef 8. Wu JM, Kuo CH: Ultraviolet photodetectors made from SnO 2 nanowires.

Comments are closed.