In principle, the stigmation values can also be finely tuned, but here we focus our effort on optimizing the

working distance. After several iterations, similar exposed line widths were observed at the writing field center and corners, which suggests that an optimal working distance was achieved to Volasertib purchase give a relatively uniform exposed pattern across the CBL-0137 cell line entire writing field. To verify the effectiveness of our method, under the optimal exposure parameters, we exposed the high-resolution resist PMMA (100-nm thickness, coated on silicon that was mounted beside the wafer coated with nitrocellulose) at line dose of 400 to 3,300 pC/cm. Note that the optimal exposure parameters remain valid as long as the aperture size (that https://www.selleckchem.com/products/p5091-p005091.html determines the depth of focus as well as beam current) and working distance remain the same (if the sample is at a height level different from the nitrocellulose film, the stage can be raised/lowered

to obtain roughly the same working distance). After development using the standard developer MIBK:IPA (1:3) for 40 s, the pattern was coated with 10-nm Cr and examined by SEM. Results and discussion Exposure properties of nitrocellulose with and without ex situ solvent development Figure 1 shows the contrast curves for nitrocellulose exposed at 20 keV without ex situ development (Figure 1a) and with pentyl acetate development for 60 s (Figure 1b). As expected, for both cases, a thick residual layer of nearly approximately 20% of the original film

thickness was left behind even at very high exposure doses. Consequently, nitrocellulose is not a useful electron Amino acid beam resist for pattern transfer purpose, but it is acceptable for the purpose of providing in situ feedback for electron beam lithography. As a self-developing resist, the sensitivity (defined as the dose for 50% remaining thickness) is about 2,000 μC/cm2. The sensitivity is about 10 times lower than PMMA (clearing dose approximately 200 μC/cm2 at 20 keV), but again this is not a serious drawback for our purpose since the time to expose the test pattern is short enough. As for the contrast, one cannot derive a meaningful value from the contrast curve, yet clearly the nitrocellulose resist has a low contrast, which makes it unsuitable for exposing high-resolution dense pattern. Nonetheless, it is capable of delineating high-resolution sparse pattern for which proximity effect is insignificant, as seen in Figure 2a that shows a resolution down to 15 nm. Actually, another very low contrast resist SU-8 has also achieved a high resolution of 24 nm [20]. Figure 1 Contrast curves for nitrocellulose. Exposure at 20 keV without ex situ development (a) and with 60-s development in pentyl acetate (b). The inset in (a) shows the chemical structure of nitrocellulose. Figure 2 SEM and AFM images of structures in nitrocellulose. (a) SEM image of line array exposed in nitrocellulose without ex situ development, showing a line width of 15 nm.