The mean follow-up period was 10.8 years (range, ten to twelve years). The patients were assessed clinically and radiographically with the rating system of the Knee Society and with the Western Ontario and McMaster Universities Osteoarthritis Index (WOMAC) score at three months, one year, and annually thereafter.
Results: Total knee scores, knee function scores, pain scores, WOMAC scores, knee motion, and activity scores did not show statistically significant differences between the two groups preoperatively or at the time of the final follow-up. Alignment and the survivorship of the components were not significantly different between the two groups. The Kaplan-Meier survivorship with revision
as the end point at 10.8 years was 98.8% (95% confidence interval [CI], 0.96 to 1.00) in the computer-navigated total knee arthroplasty group and 99.2% (95% CI, 0.96 to 1.00) in the conventional total knee arthroplasty group.
Conclusions: Our data demonstrated no difference in CA3 in vitro see more clinical function or alignment and survivorship of the components between the knees that underwent computer-navigated total knee arthroplasty and those that underwent conventional total knee arthroplasty.”
“In this work, metal/interlayer/semiconductor (MIS) diodes formed by coating of an organic film to p-Si semiconductor substrate were prepared. Metal(Al)/interlayer (phenolsulfonphthalein=PSP)/semiconductor(p-Si)
MIS device had a good rectifying behavior. By using the forward bias I-V characteristics, the values
of ideality factor (n) and barrier height (Phi(b)) for the Al/PSP/p-Si MIS diode were obtained as 1.45 and 0.81 eV, respectively. It was seen that the Phi(b) value of 0.81 eV calculated for the Al/PSP/p-Si MIS Caspase inhibitor diode was significantly larger than value of 0.50 eV of conventional Al/p-Si Schottky diodes. Modification of the interfacial potential barrier of Al/p-Si diode was achieved by using a thin interlayer of the PSP organic material. This has been attributed to the fact that the PSP organic interlayer increases the effective barrier height by influencing the space-charge region of Si. The interface-state density of the MIS diode was determined, and the interface-state density was found to vary from 3.00 x 10(13) to 2.99 x 10(12) eV(-1) cm(-2). (C) 2009 American Institute of Physics. [doi:10.1063/1.3261835]“
“The neurobiological basis of attention-deficit hypeactivity disorder (ADHD) in tuberous sclerosis complex is still largely unknown. Cortical tubers may disrupt several brain networks that control different types of attention. Frontal lobe dysfunction due to seizures or epileptiform electroencephalographic discharges may perturb the development of brain systems that underpin attentional and hyperactive functions during a critical early stage of brain maturation. Comorbidityof attention-deficit hyperactivity disorder (ADHD) with mental retardation and autism spectrum disorders is frequent in children with tuberous sclerosis.